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2SK3391
Silicon N-Channel MOS FET UHF Power Amplifier
REJ03G0209-0200Z (Previous ADE-208-847 (Z)) Rev.2.00 Apr.14.2004
Features
* High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, add = 58% min. (f = 836 MHz) * Compact package capable of surface mounting
Outline
UPAK
D 3 1 G 3
2
1
4 2,4 S
1. Gate 2. Source 3. Drain 4. Source
Note:
Marking is "JX".
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW < 1sec, Tch < 150C 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse) Note1 Pch Note2 Tch Tstg Ratings 17 10 0.3 0.75 5 150 -45 to +150 Unit V V A A W C C
Rev.2.00, Apr.14.2004, page 1 of 4
2SK3391
Electrical Characteristics
(Ta = 25C)
Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Added Efficiency Symbol IDSS IGSS VGS(off) Ciss Coss Pout add Min -- -- 2.3 -- -- 1.6 58 Typ -- -- -- 10 3.5 -- -- Max 10 5 3.1 -- -- -- -- Unit A A V pF pF W % Test Conditions VDS = 13.7 V, VGS = 0 VGS = 10 V, VDS = 0 ID = 1 mA, VDS = 13.7 V VGS = 5 V, VDS = 0, f = 1 MHz VDS = 13.7 V, VGS = 0, f = 1 MHz VDS = 13.7 V, IDO = 0.15 A f = 836 MHz, Pin = 25.1 mW VDS = 13.7 V, IDO = 0.15 A f = 836 MHz, Pin = 25.1 mW
Main Characteristics
Maximum Channel Power Dissipation Curve Typical Output Characteristics 1.5 10 V 8V 7V
Pch (W)
8
6
Channel Power Dissipation
(A) ID
1 6V
4
Drain Current
0.5
5V VGS = 4 V Pulse Test
2
0
50
100
150 Tc (C)
200
0
Case Temperature
2 4 6 Drain to Source Voltage
8 VDS
10 (V)
Typical Transfer Characteristics 0.8 Tc = 75C 25C - 25C
1
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
0.3 0.1
Tc = - 25C
(A)
0.6
ID
25C
Drain Current
0.4
0.03
75C
0.01
0.2 VDS = 13.7 V Pulse Test 0.0 2 3 4 5 Gate to Source Voltage 6 VGS 7 (V)
0.003 0.001 0.001 0.003
VDS = 13.7 V Pulse Test
0.01 0.03 0.1 0.3 1
Drain Current ID (A)
Rev.2.00, Apr.14.2004, page 2 of 4
2SK3391
Drain to Source Saturation Voltage vs. Drain Current
Gate to Source Cutoff Voltage VGS(off) (V)
Drain to Source Saturation Voltage VDS(sat) (V)
Gate to Source Cutoff Voltage vs. Ambient Temperature 3.6
1 0.3 0.1 25C 0.03 0.01
75C
3.2
10 mA
2.8
1 mA
2.4
ID = 0.1
mA
Tc = - 25C VGS = 10 V Pulse Test 10
0.003
2.0 VDS = 13.7 V 1.6 - 25 0 25 50 75 100 Ta (C) 125
0.001 0.01 0.03 0.1 0.3 1 3 Drain Current ID (A) Input Capacitance vs. Gate to Source Voltage 10.5
Ambient Temperature
Output Capacitance vs. Drain to Source Voltage 100
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)
VGS = 0 f = 1 MHz 30
10
9.5
10
9 VDS = 0 f = 1 MHz 8.5 -10 -6 -2 2 6 10 (V)
3
1 0.1
0.3
1
3
10
30 (V)
Gate to Source Voltage VGS
Drain to Source Voltage VDS
Reverse Transfer Capacitance Crss (pF)
Reverse Transfer Capacitance vs. Drain to Gate Voltage 10
Output Power Pout (W)
2.5 VGS = 0 f = 1 MHz
Output Power, Added Efficiency vs. Input Power Pout
100
add (%) Added Efficiency
3
2 add
80
1.5
60
1 0.3
1 VDS = 13.7 V IDO = 0.15 A f = 836 MHz 0 50 100 150 200
40
0.5
20
0.1 0.1
0 0.3 1 3 10 30 250 Drain to Gate Voltage VDG (V) Input power Pin (mW)
0
Rev.2.00, Apr.14.2004, page 3 of 4
2SK3391
Package Dimensions
As of January, 2003
Unit: mm
4.5 0.1
1.5 1.5 3.0
0.8 Min
0.44 Max
Package Code JEDEC JEITA Mass (reference value)
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
UPAK -- Conforms 0.050 g
Ordering Information
Part Name 2SK3391JX Quantity 1000 Shipping Container Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00, Apr.14.2004, page 4 of 4
(0.2)
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0
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